Author Affiliations
Abstract
1 Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
3 Hangzhou Institute of Optics and Fine Mechanics, Hangzhou 311421, China
Sb-doped crystals were grown using the optical floating zone (OFZ) method. X-ray diffraction data and X-ray rocking curves were obtained, and the results revealed that the Sb-doped single crystals were of high quality. Raman spectra revealed that Sb substituted Ga mainly in the octahedral lattice. The carrier concentration of the Sb-doped single crystals increased from to , the electronic mobility depicted a decreasing trend from to , and the electrical resistivity varied from 0.603 to 0.017 ·cm with the increasing Sb doping concentration. The un-doped and Sb-doped crystals exhibited good light transmittance in the visible region; however, the evident decrease in the infrared region was caused by increase in the carrier concentration. The Sb-doped single crystals had high transmittance in the UV region as well, and the cutoff edge appeared at 258 nm.
Sb-doped β-Ga2O3 crystal growth optical properties electrical properties Chinese Optics Letters
2023, 21(4): 041605
1 苏州科技大学物理科学与技术学院, 江苏省微纳热流技术与能源应用重点实验室, 苏州 215009
2 中国科学院上海光学精密机械研究所, 上海 201800
3 中国科学院苏州纳米技术与纳米仿生研究所, 苏州 215123
采用离子注入法制备了不同剂量的β-Ga2O3∶Eu3+样品, 并在空气中进行了退火处理, 成功实现了Eu3+的光学激活。通过拉曼和X射线衍射表征了β-Ga2O3晶体随Eu3+注入剂量的应力变化趋势, 发现随着Eu3+剂量的增加, 晶格应力先增加后减少, 并对其内在机理进行了分析。利用阴极荧光光谱对晶体的发光性质进行了表征, 主要观察到峰值位于380 nm附近、宽的缺陷发光峰以及峰值位于591 nm、597 nm和613 nm的Eu3+发光峰。通过高斯拟合发现, 该380 nm发光峰主要由360 nm、398 nm和442 nm三个子峰构成, 分别与自陷激子和施主-受主对有关。此外, Eu3+发光峰位置与强度受到基质局域晶体场的影响。
氧化镓 铕 应力 发光性质 缺陷 离子注入 高斯拟合 gallium oxide europium stress luminescent property defect ion implantation Gaussian fitting
Author Affiliations
Abstract
1 Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
2 Physics Department, Faculty of Science, Sohag University, 82524, Sohag, Egypt
The rapid development of bulk β-Ga2O3 crystals has attracted much attention to their use as ultra-wide bandgap materials for next-generation power devices owing to its large bandgap (~ 4.9 eV) and large breakdown electric field of about 8 MV/cm. Low cost and high quality of large β-Ga2O3 single-crystal substrates can be attained by melting growth techniques widely used in the industry. In this paper, we first present an overview of the properties of β-Ga2O3 crystals in bulk form. We then describe the various methods for producing bulk β-Ga2O3 crystals and their applications. Finally, we will present a future perspective of the research in the area in the area of single crystal growth.
Journal of Semiconductors
2019, 40(1): 011801
Author Affiliations
Abstract
1 School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China
2 Shagnhai Institute of Ceramics, Chinese Academy of Science, Shanghai 201899, China
3 Jiangsu Key Laboratory of Advanced Laser Materials and Devices, School of Physics and Electronic Engineering, Jiangsu Normal University, Xuzhou 221116, China
4 Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Science, Shanghai 201800, China
5 School of Physics Science and Engineering, Institute for Advanced Study, Tongji University, Shanghai 200092, China
6 Institute of Low Temperature and Structure Research PAS. Okolna 2 Street, Wroclaw 50-422, Poland
A highly transparent Eu3+-doped CaGdAlO4 (CGA) single crystal is grown by the floating zone method. The segregation coefficient, x ray diffraction, and x ray rocking curve are detected, and the results reveal that the single crystal is of high quality. The f–f transitions of Eu3+ in the host lattice are discussed. The D05–F72 emission transition at 621 nm (red light) is dominant over the D05–F71 emission transitions at 591 and 599 nm (orange light), agreeing well with the random crystal environment of Eu3+ ions in a CGA crystal. The decay time of Eu:D05 is measured to be 1.02 ms. All the results show that the Eu:CGA crystal has good optical characterization and promises to be an excellent red- fluorescence material.
160.2540 Fluorescent and luminescent materials 300.6170 Spectra 260.1180 Crystal optics 160.4670 Optical materials Chinese Optics Letters
2016, 14(2): 021602
1 中国农业大学理学院, 北京 100083
2 中国科学院物理研究所北京凝聚态物理国家实验室, 北京 100190
3 江苏师范大学物理与电子工程学院先进激光材料与器件重点实验室, 江苏 徐州 221116
4 同济大学物理科学与工程学院,上海 200092
5 中国科学院上海光学精密机械研究所强激光材料重点实验室, 上海 201800
采用X型谐振腔，实验研究了二极管抽运Nd:CGA激光器的连续和被动锁模激光特性。当Nd:CGA激光器实现连续运转时，采用不同透过率的输出镜优化激光器的连续输出功率。采用透射率为20%的输出镜时，获得了1.8 W的最高连续输出功率，斜率效率达到30.8%，中心波长为1079 nm；采用半导体可饱和吸收反射镜作为锁模元件、透射率为1.6%的平面镜作为输出镜，获得了脉冲宽度为2.7 ps、重复频率为177 MHz的被动锁模脉冲输出。当抽运功率为6.9 W时，获得锁模脉冲的最大平均输出功率为524 mW，相应的光光转换效率和斜率效率分别为7.6%和8.0%。
激光器 二极管抽运 Nd:CGA 激光器 连续激光 被动锁模激光 激光与光电子学进展
2016, 53(10): 101410
Author Affiliations
Abstract
Chinese Optics Letters
2014, 12(3): 033501
Author Affiliations
Abstract
YAG-Ce, Nd, and Yb phosphors with a triple-doped system are prepared by conventional solid-state reaction method. The fluorescence emission and excitation spectra are measured and analyzed. The influences of Yb3+ doping concentration on the emission of Yb3+ and Nd3+ in YAG-Ce, Nd, and Yb are studied. The fluorescence decay spectra, lifetime, and energy transfer efficiency of Ce3+ in different host materials of YAG-Ce and Yb, and YAG-Ce, Nd, and Yb are also compared. Furthermore, the trends of fluorescence decay spectra and the lifetimes of Nd3+ and Yb3+ in YAG-Ce, Nd, and Yb with the increase of Yb3+concentration are discussed. Results indicate that YAG-Ce, Nd, and Yb are good candidates for downconverting phosphor, with energy transfer efficiency reaching as high as 82.8%.
160.4670 Optical materials 160.4760 Optical properties 160.4890 Organic materials 160.5690 Rare-earth-doped materials Chinese Optics Letters
2013, 11(6): 061604
Author Affiliations
Abstract
V-doped MgAl6O10 is grown by the conventional Czochralski method. The crystal structure and the cell parameters are analyzed through X-ray diffraction experiments. The absorption and emission spectra are investigated. Under pumping at 324 nm, the emission spectra of V-doped MgAl6O10 obtain two emission peaks at the wavelengths of 471 and 570 nm. Two emission bands of the spectra combine to produce a spectrum that is perceived as white by the naked eye. Therefore, V-doped MgAl6O10 single crystal can be applied as substrate for phosphor-free ultraviolet (UV)-white light-emitting diodes (LEDs).
160.0160 Materials 160.2100 Electro-optical materials 160.4670 Optical materials Chinese Optics Letters
2012, 10(2): 021601
1 华南师范大学 物理与电信工程学院,广东 广州 510006
2 中国科学院 上海光学精密机械研究所 强激光材料重点实验室,上海 201800
通过凝胶固相法在1400 ℃合成了单掺Mn2+,单掺Cr3+以及双掺Mn2+和Cr3+的镁铝尖晶石粉体。单掺Mn2+离子的样品在450 nm波长激发下有绿光发射(520 nm),单掺Cr3+离子的样品在397 nm波长激发下具有蓝光(450 nm)和红光发射(689 nm),在545 nm波长激发下也有红光发射(689 nm);而双掺的Mg1-xAl2(1-y)O4:xMn2+,yCr3+粉末在450 nm波长的蓝光激发下,同时具有绿光(515 nm)和红光发射(677 nm,694 nm)。实验发现在共掺杂的镁铝尖晶石体系中Mn2+和Cr3+离子之间存在能量传递,二者可以互为激活中心和敏化中心,其中Mn2+对Cr3+的敏化作用较强。因此这种粉体可以用做蓝光芯片激发的白光LED灯用荧光粉。实验证明Mn2+→Cr3+的能量传递方式为辐射再吸收。
材料 荧光粉 镁铝尖晶石 Mn2+离子 Cr3+离子 能量传递
Author Affiliations
Abstract
1 Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800
2 Key Laboratory of Materials Physics, and Anhui Key Laboratory of Nanomaterials and Nanostructures, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031
3 GE (China) Research and Development Center Company Limited, Shanghai 201203
Nitridated \beta-Ga2O3 (100) substrate was investigated as the substrate for GaN epitaxial growth. The effects of nitridation temperature and surface roughness of \beta-Ga2O3 wafers on the formation of GaN were studied. It was found that the most optimized nitridation temperature was 900 oC, and hexagonal GaN with preferred orientation was produced on the well-polished wafer. The nitridation mechanism was also discussed.
材料处理 表面 光电子学 拉曼散射 光致发光 350.3850 Materials processing 240.6700 Surfaces 250.0250 Optoelectronics 290.5860 Scattering, Raman 250.5230 Photoluminescence Chinese Optics Letters
2008, 6(4): 282
